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Volumn 21, Issue 3, 2000, Pages 123-126

New observation of band-to-band tunneling induced hot-carrier stress using charge-pumping technique

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CHARGE; ELECTRIC CURRENT MEASUREMENT; ELECTRIC FIELDS; ELECTRON TUNNELING; FERMI LEVEL; INTERFACES (MATERIALS); MOSFET DEVICES; NATURAL FREQUENCIES; NONLINEAR EQUATIONS;

EID: 0033871503     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.823576     Document Type: Article
Times cited : (9)

References (9)
  • 1
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    • S. Hadded et al., "An investigation of erase-mode dependent hole trapping in flash EEPROM memory cell," IEEE Electron Device Lett., vol. 11, pp. 514-516, Nov. 1990.
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    • Hadded, S.1
  • 2
    • 84955615858 scopus 로고
    • Erratic erase in ETOX flash memory array
    • T. C. Ong et al., "Erratic erase in ETOX flash memory array," in Proc. IEEE VLSI Technology. Symp., 1993, pp. 83-84.
    • (1993) Proc. IEEE VLSI Technology. Symp. , pp. 83-84
    • Ong, T.C.1
  • 3
    • 0029519228 scopus 로고
    • Short channel enhanced degradation during discharge of flash EEPROM memory cell
    • J. Chen et al., "Short channel enhanced degradation during discharge of flash EEPROM memory cell," in IEDM Tech. Dig., 1995, pp. 331-334.
    • (1995) IEDM Tech. Dig. , pp. 331-334
    • Chen, J.1
  • 4
    • 0032000289 scopus 로고    scopus 로고
    • Direct lateral profiling of hot-carrier-induced oxide charge and interface traps in thin gate MOSFETs
    • Feb.
    • C. Chen and T. P. Ma, "Direct lateral profiling of hot-carrier-induced oxide charge and interface traps in thin gate MOSFETs," IEEE Trans. Electron Devices, vol. 45, pp. 512-520, Feb. 1998.
    • (1998) IEEE Trans. Electron Devices , vol.45 , pp. 512-520
    • Chen, C.1    Ma, T.P.2
  • 5
    • 0029512440 scopus 로고
    • Novel electron injection method using band-to-band tunneling induced hot electron (BBHE) for flash memory with a p-channel cell
    • T. Ohnakado et al., "Novel electron injection method using band-to-band tunneling induced hot electron (BBHE) for flash memory with a p-channel cell," in IEDM Tech. Dig., 1995, pp. 279-282.
    • (1995) IEDM Tech. Dig. , pp. 279-282
    • Ohnakado, T.1
  • 6
    • 0033882264 scopus 로고    scopus 로고
    • A new charge-pumping technique for profiling the interface-states and oxide-trapped charges
    • Feb.
    • Y. L. Chu, D. W. Lin, and C. Y. Wu, "A new charge-pumping technique for profiling the interface-states and oxide-trapped charges," IEEE Trans. Electron Devices, vol. 46, Feb. 2000.
    • (2000) IEEE Trans. Electron Devices , vol.46
    • Chu, Y.L.1    Lin, D.W.2    Wu, C.Y.3
  • 8
    • 0030284971 scopus 로고    scopus 로고
    • A new simplified charge-pumping current model and its model parameter extraction
    • Nov.
    • H. H. Li, Y. L. Chu, and C. Y. Wu, "A new simplified charge-pumping current model and its model parameter extraction," IEEE Trans. Electron Devices, vol. 43, pp. 1857-1863, Nov. 1996.
    • (1996) IEEE Trans. Electron Devices , vol.43 , pp. 1857-1863
    • Li, H.H.1    Chu, Y.L.2    Wu, C.Y.3
  • 9
    • 0032674653 scopus 로고    scopus 로고
    • A new quasi-2D model for hot-carrier band-to-band tunneling current
    • June
    • K. F. You and C. Y. Wu, "A new quasi-2D model for hot-carrier band-to-band tunneling current," IEEE Trans. Electron Devices, vol. 46, pp. 1174-1179, June 1999.
    • (1999) IEEE Trans. Electron Devices , vol.46 , pp. 1174-1179
    • You, K.F.1    Wu, C.Y.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.