Optical properties of highly strained GaInAs/GaAs quantum wells grown by Sb assistance

Chinese Physics Letters

Volumn 22, Issue 8, 2005, Pages 2088-2091

  Qu, Yu Hua ^a   Jiang, De Sheng ^a   Wu, Dong Hai ^a   Niu, Zhi Chuan ^a   Sun, Zheng ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; SEMICONDUCTOR COUNTERS; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE DISTRIBUTION; TRANSMISSION ELECTRON MICROSCOPY;

DEPOSITION METHODS; GAAS QUANTUM WELLS; GAINAS/GAAS; HIGHLY STRAINED; MOLECULAR-BEAM EPITAXY; PEAK POSITION; PHOTOLUMINESCENCE PEAK; PRE-DEPOSITION; S-SHAPED; TEMPERATURE DEPENDENCE;

OPTICAL PROPERTIES;

EID: 23844445612     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/22/8/073     Document Type: Article

References (8)

1. Snyder C W et al 1991 Phys. Rev. Lett. 66 511
2. Yang X et al 1999 Appl. Phys. Lett. 75 178
3. Harmand J C et al 2004 Appl. Phys. Lett. 84 3981
4. Chakrabartil A and Kunc K 2004 Phys. Rev. B 70 085313
5. Park Y M et al 2004 J. Appl. Phys. 96 5496
6. Bian L F et al 2004 Chin. Phys. Lett. 21 548
7. Park Y M et al 2004 Phys. Rev. B 70 035322
8. Takahashi Y et al 1991 Appl. Phys. Lett. 60 213