High-performance EML grown on taper-masked pattern substrates by ultra-low-pressure MOCVD

Journal of Crystal Growth

Volumn 288, Issue 1, 2006, Pages 27-31

  Zhao, Q ^a   Pan, J Q ^a   Zhang, J ^a   Zhu, H L ^a   Wang, W ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1. Selective area growth; A2. Ultra low pressure; A3. InGaAsP; A4. Tapered mask; A5. Integrated device

Indexed keywords

CRYSTALLINE MATERIALS; MASKS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTIMIZATION; PHOTOLUMINESCENCE; PRESSURE EFFECTS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

INGAASP; INTEGRATED DEVICES; SELECTIVE AREA GROWTH; TAPERED MASKS; ULTRA-LOW PRESSURE;

CRYSTAL GROWTH;

EID: 31644440636     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.12.027     Document Type: Conference Paper

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