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Volumn 44, Issue 1, 2000, Pages 147-173

Semiconductor lasers for planar integrated optoelectronics

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; INTEGRATED OPTOELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS;

EID: 0033640097     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00221-X     Document Type: Article
Times cited : (10)

References (99)
  • 2
    • 0031223149 scopus 로고    scopus 로고
    • Hybrid dielectric/metal reflector for low threshold vertical-cavity surface-emitting lasers
    • McDaniel M.R., Huffaker D.L., Deppe D.G. Hybrid dielectric/metal reflector for low threshold vertical-cavity surface-emitting lasers. Electron. Lett. 33:1997;1704-1705.
    • (1997) Electron. Lett. , vol.33 , pp. 1704-1705
    • Mcdaniel, M.R.1    Huffaker, D.L.2    Deppe, D.G.3
  • 3
    • 0000705420 scopus 로고
    • Very high efficiency GaInAsP/GaAs strained-layer quantum well lasers (λ=980 nm) with GaInAsP optical confinement layers
    • Groves S.H., Walpole J.N., Missaggia L.J. Very high efficiency GaInAsP/GaAs strained-layer quantum well lasers (λ=980 nm) with GaInAsP optical confinement layers. Appl. Phys. Lett. 61:1992;255-257.
    • (1992) Appl. Phys. Lett. , vol.61 , pp. 255-257
    • Groves, S.H.1    Walpole, J.N.2    Missaggia, L.J.3
  • 7
    • 0342746278 scopus 로고
    • From physics to function
    • Morton J.A. From physics to function. IEEE Spectrum. 1965;62-66.
    • (1965) IEEE Spectrum , pp. 62-66
    • Morton, J.A.1
  • 8
    • 0040742996 scopus 로고
    • Transverse-junction-stripe-geometry double-heterostructure lasers with very low threshold current
    • Namizaki H., Kan H., Ishii M., Ito A. Transverse-junction-stripe-geometry double-heterostructure lasers with very low threshold current. J. Appl. Phys. 45:1974;2785-2786.
    • (1974) J. Appl. Phys. , vol.45 , pp. 2785-2786
    • Namizaki, H.1    Kan, H.2    Ishii, M.3    Ito, A.4
  • 9
    • 0016535724 scopus 로고
    • Transverse-junction-stripe-geometry double-heterostructure lasers with a GaAs p-n homojunction
    • Namizaki H. Transverse-junction-stripe-geometry double-heterostructure lasers with a GaAs p-n homojunction. IEEE J. Quantum Electron. QE-11:1975;427-431.
    • (1975) IEEE J. Quantum Electron. , vol.11 , pp. 427-431
    • Namizaki, H.1
  • 10
    • 0342311362 scopus 로고
    • Long-life GaAs-GaAlAs TJS laser with low threshold current and fundamental transverse and single longitudinal mode
    • Namizaki H., Ishii M., Kan H., Ohmura E., Hirano R., Ito A. Long-life GaAs-GaAlAs TJS laser with low threshold current and fundamental transverse and single longitudinal mode. Optics Communications. 18:1976;39-40.
    • (1976) Optics Communications , vol.18 , pp. 39-40
    • Namizaki, H.1    Ishii, M.2    Kan, H.3    Ohmura, E.4    Hirano, R.5    Ito, A.6
  • 11
    • 0016986476 scopus 로고
    • New structures of GaAlAs lateral-injection laser for low-threshold and single-mode operation
    • Susaki W., Tanaka T., Kan H., Ishii M. New structures of GaAlAs lateral-injection laser for low-threshold and single-mode operation. IEEE J. Quantum Electron. QE-13:1977;587-591.
    • (1977) IEEE J. Quantum Electron. , vol.13 , pp. 587-591
    • Susaki, W.1    Tanaka, T.2    Kan, H.3    Ishii, M.4
  • 13
    • 0343616271 scopus 로고
    • High temperature single-mode cw operation with a junction-up TJS laser
    • Kumabe H., Tanaka T., Namizaki H., Ishii M., Susaki W. High temperature single-mode cw operation with a junction-up TJS laser. Appl. Phys. Lett. 33:1978;38-39.
    • (1978) Appl. Phys. Lett. , vol.33 , pp. 38-39
    • Kumabe, H.1    Tanaka, T.2    Namizaki, H.3    Ishii, M.4    Susaki, W.5
  • 14
    • 0022790299 scopus 로고
    • Ten-thousand-hour operation of crank transverse-junction-stripe lasers grown by metal-organic chemical vapor deposition
    • Isshiki K., Kaneno N., Kumabe H., Namizaki H., Ikeda K., Susaki W. Ten-thousand-hour operation of crank transverse-junction-stripe lasers grown by metal-organic chemical vapor deposition. IEEE J. Lightwave Technol. LT-4:1986;1475-1481.
    • (1986) IEEE J. Lightwave Technol. , vol.4 , pp. 1475-1481
    • Isshiki, K.1    Kaneno, N.2    Kumabe, H.3    Namizaki, H.4    Ikeda, K.5    Susaki, W.6
  • 17
    • 0021531916 scopus 로고
    • Aging behavior and surge endurance of 870-900 nm AlGaAs lasers with nonabsorbing mirrors
    • Kadota Y., Chino K., Onodera Y., Namizaki H., Takamiya S. Aging behavior and surge endurance of 870-900 nm AlGaAs lasers with nonabsorbing mirrors. IEEE J. Quantum Electron. QE-20:1984;1247-1251.
    • (1984) IEEE J. Quantum Electron. , vol.20 , pp. 1247-1251
    • Kadota, Y.1    Chino, K.2    Onodera, Y.3    Namizaki, H.4    Takamiya, S.5
  • 22
    • 0343616269 scopus 로고
    • Transverse junction stripe laser with a lateral heterobarrier by diffusion enhanced alloy disordering
    • Yang Y.J., Lo Y.C., Lee G.S., Hsieh K.Y., Kolbas R.M. Transverse junction stripe laser with a lateral heterobarrier by diffusion enhanced alloy disordering. Appl. Phys. Lett. 49:1986;835-837.
    • (1986) Appl. Phys. Lett. , vol.49 , pp. 835-837
    • Yang, Y.J.1    Lo, Y.C.2    Lee, G.S.3    Hsieh, K.Y.4    Kolbas, R.M.5
  • 23
    • 0342746261 scopus 로고
    • Surface and bulk leakage currents in transverse junction stripe lasers
    • Sin Y., Hsieh K.Y., Lee J.H., Kolbas R.M. Surface and bulk leakage currents in transverse junction stripe lasers. J. Appl. Phys. 69:1991;1081-1090.
    • (1991) J. Appl. Phys. , vol.69 , pp. 1081-1090
    • Sin, Y.1    Hsieh, K.Y.2    Lee, J.H.3    Kolbas, R.M.4
  • 24
    • 0020128740 scopus 로고
    • Groove GaInAsP laser on semi-insulating InP using a laterally diffused junction
    • Yu K.L., Koren U., Chen T.R., Yariv A. Groove GaInAsP laser on semi-insulating InP using a laterally diffused junction. IEEE J. Quantum Electron. QE-18:1982;817-819.
    • (1982) IEEE J. Quantum Electron. , vol.18 , pp. 817-819
    • Yu, K.L.1    Koren, U.2    Chen, T.R.3    Yariv, A.4
  • 25
    • 0342746207 scopus 로고
    • High-power, single-mode operation of an InGaAsP/InP laser with a grooved transverse junction using gain stabilization
    • Chen T.R., Koren U., Yu K.L., Lau K.Y., Chiu L.C., Hasson A., Margalit S., Yariv A. High-power, single-mode operation of an InGaAsP/InP laser with a grooved transverse junction using gain stabilization. Appl. Phys. Lett. 41:1982;225-228.
    • (1982) Appl. Phys. Lett. , vol.41 , pp. 225-228
    • Chen, T.R.1    Koren, U.2    Yu, K.L.3    Lau, K.Y.4    Chiu, L.C.5    Hasson, A.6    Margalit, S.7    Yariv, A.8
  • 26
    • 0342746259 scopus 로고
    • Room-temperature continuous wave operation of a visible AlGaAs/InGaP transverse junction stripe laser grown by liquid phase epitaxy
    • Chang L.B., Shia L.Z. Room-temperature continuous wave operation of a visible AlGaAs/InGaP transverse junction stripe laser grown by liquid phase epitaxy. Appl. Phys. Lett. 60:1992;1090-1092.
    • (1992) Appl. Phys. Lett. , vol.60 , pp. 1090-1092
    • Chang, L.B.1    Shia, L.Z.2
  • 27
    • 0027624608 scopus 로고
    • Fabrication methods for an AlGaAs/InGaP/AlGaAs visible laser with transverse junction stripe structure grown by liquid phase epitaxy
    • Chang L.B., Shai L.Z. Fabrication methods for an AlGaAs/InGaP/AlGaAs visible laser with transverse junction stripe structure grown by liquid phase epitaxy. Solid State Electron. 36:1993;1049-1054.
    • (1993) Solid State Electron. , vol.36 , pp. 1049-1054
    • Chang, L.B.1    Shai, L.Z.2
  • 28
    • 0023294375 scopus 로고
    • Planar TJS lasers fabricated in semi-insulating GaAs substrates for optoelectronic integrated circuits
    • Ishii M., Kamon K., Shimazu M., Mihara M., Kumabe H., Isshiki K. Planar TJS lasers fabricated in semi-insulating GaAs substrates for optoelectronic integrated circuits. Electron. Lett. 23:1987;179-181.
    • (1987) Electron. Lett. , vol.23 , pp. 179-181
    • Ishii, M.1    Kamon, K.2    Shimazu, M.3    Mihara, M.4    Kumabe, H.5    Isshiki, K.6
  • 29
  • 30
    • 0023647212 scopus 로고
    • Monolithic integration of a transverse-junction stripe laser and metal-semiconductor field-effect transistors on a semi-insulating GaAs substrate
    • Ohta J., Kuroda K., Mitsunaga K., Kyuma K., Hamanaka K., Nakayama T. Monolithic integration of a transverse-junction stripe laser and metal-semiconductor field-effect transistors on a semi-insulating GaAs substrate. Electron. Lett. 23:1987;509-510.
    • (1987) Electron. Lett. , vol.23 , pp. 509-510
    • Ohta, J.1    Kuroda, K.2    Mitsunaga, K.3    Kyuma, K.4    Hamanaka, K.5    Nakayama, T.6
  • 32
    • 0023862058 scopus 로고
    • New low capacitance transverse junction stripe AlGaAs/GaAs laser for planar laser-MESFET integration
    • Brillouet F., Rao E.V.K., Beerens J. New low capacitance transverse junction stripe AlGaAs/GaAs laser for planar laser-MESFET integration. Electron. Lett. 24:1988;97-99.
    • (1988) Electron. Lett. , vol.24 , pp. 97-99
    • Brillouet, F.1    Rao, E.V.K.2    Beerens, J.3
  • 33
    • 0025555392 scopus 로고
    • Monolithic integration of a lateral current injection laser and a JFET based on the same modulation doped structure
    • Honda Y., Suemune I., Yamanishi M. Monolithic integration of a lateral current injection laser and a JFET based on the same modulation doped structure. 22nd Conference on Solid State Devices and Materials :1990;1179-1180.
    • (1990) 22nd Conference on Solid State Devices and Materials , pp. 1179-1180
    • Honda, Y.1    Suemune, I.2    Yamanishi, M.3
  • 34
    • 0342746203 scopus 로고
    • Selectively doped double-heterojunction lateral current injection ridge waveguide AlGaAs/GaAs laser
    • Yasuhira N., Suemune I., Kan Y., Yamanishi M. Selectively doped double-heterojunction lateral current injection ridge waveguide AlGaAs/GaAs laser. Appl. Phys. Lett. 56:1990;1391-1393.
    • (1990) Appl. Phys. Lett. , vol.56 , pp. 1391-1393
    • Yasuhira, N.1    Suemune, I.2    Kan, Y.3    Yamanishi, M.4
  • 35
    • 0025661507 scopus 로고
    • New optoelectronic device based on modulation-doped heterostructure: Demonstration of functions as both lateral current injection laser and junction field effect transistor
    • Honda Y., Suemune I., Yasuhira N., Yamanishi M. new optoelectronic device based on modulation-doped heterostructure: demonstration of functions as both lateral current injection laser and junction field effect transistor. IEEE Photon. Technol. Lett. 2:1990;881-883.
    • (1990) IEEE Photon. Technol. Lett. , vol.2 , pp. 881-883
    • Honda, Y.1    Suemune, I.2    Yasuhira, N.3    Yamanishi, M.4
  • 36
    • 0026155493 scopus 로고
    • Continuous-wave operation of lateral current injection ridge waveguide AlGaAs/GaAs laser with a selectively-doped heterostructure. 1
    • Honda Y., Suemune I., Yasuhira N., Yamanishi M. Continuous-wave operation of lateral current injection ridge waveguide AlGaAs/GaAs laser with a selectively-doped heterostructure. 1. Jpn. J. Appl. Phys. 30:1991;990-991.
    • (1991) Jpn. J. Appl. Phys. , vol.30 , pp. 990-991
    • Honda, Y.1    Suemune, I.2    Yasuhira, N.3    Yamanishi, M.4
  • 37
    • 0343616216 scopus 로고
    • Small-signal and continuous wave operation of the lateral current injection heterostructure field-effect laser
    • Evaldsson P.A., Taylor G.W., Cooke P., Claisse P.R., Burrus C.A., Tell B. Small-signal and continuous wave operation of the lateral current injection heterostructure field-effect laser. Appl. Phys. Lett. 60:1992;1697-1699.
    • (1992) Appl. Phys. Lett. , vol.60 , pp. 1697-1699
    • Evaldsson, P.A.1    Taylor, G.W.2    Cooke, P.3    Claisse, P.R.4    Burrus, C.A.5    Tell, B.6
  • 39
    • 0024611367 scopus 로고
    • Monolithically integrated transverse-junction-stripe laser with an external waveguide in GaAs/AlGaAs
    • Vawter G.A., Merz J.L., Coldren L.A. Monolithically integrated transverse-junction-stripe laser with an external waveguide in GaAs/AlGaAs. IEEE J. Quantum Electron. 25:1989;154-162.
    • (1989) IEEE J. Quantum Electron. , vol.25 , pp. 154-162
    • Vawter, G.A.1    Merz, J.L.2    Coldren, L.A.3
  • 40
    • 0019065134 scopus 로고
    • AlGaAs transverse junction stripe laser with distributed Bragg reflector
    • Kawanishi H., Hafich M., Lenz B., Petersen P. AlGaAs transverse junction stripe laser with distributed Bragg reflector. Electron. Lett. 16:1980;738-740.
    • (1980) Electron. Lett. , vol.16 , pp. 738-740
    • Kawanishi, H.1    Hafich, M.2    Lenz, B.3    Petersen, P.4
  • 41
    • 0019586666 scopus 로고
    • GaAs/AlGaAs distributed feedback-transverse junction stripe laser using a hybrid liquid phase epitaxy/metal-organic chemical vapor deposition growth technique
    • Kawanishi H., Hafich M.J., Skogman R.A., Lenz B.S., Petersen P.E. GaAs/AlGaAs distributed feedback-transverse junction stripe laser using a hybrid liquid phase epitaxy/metal-organic chemical vapor deposition growth technique. J. Appl. Phys. 52:1981;4447-4449.
    • (1981) J. Appl. Phys. , vol.52 , pp. 4447-4449
    • Kawanishi, H.1    Hafich, M.J.2    Skogman, R.A.3    Lenz, B.S.4    Petersen, P.E.5
  • 42
    • 0021553263 scopus 로고
    • Fiber-optic laser Doppler velocimeter using an external-cavity semiconductor laser
    • Kyuma K., Tai S., Nunoshita M. Fiber-optic laser Doppler velocimeter using an external-cavity semiconductor laser. Conference on Optical Fiber Communication :1984;58-59.
    • (1984) Conference on Optical Fiber Communication , pp. 58-59
    • Kyuma, K.1    Tai, S.2    Nunoshita, M.3
  • 43
    • 0023043562 scopus 로고
    • Spectral linewidth of an AlGaAs/GaAs DFB-TJS external-cavity laser with optical phase control loop
    • Kameya M., Tai S., Mitsunaga K., Kyuma K., Hamanaka K., Nakayama T. Spectral linewidth of an AlGaAs/GaAs DFB-TJS external-cavity laser with optical phase control loop. Electron. Lett. 22:1986;1231-1232.
    • (1986) Electron. Lett. , vol.22 , pp. 1231-1232
    • Kameya, M.1    Tai, S.2    Mitsunaga, K.3    Kyuma, K.4    Hamanaka, K.5    Nakayama, T.6
  • 45
    • 0023548204 scopus 로고
    • GaAs/AlGaAs surface emitting laser diode with vertical distributed feedback optical cavity and transverse junction buried heterostructure
    • Hsin W, Ogura M, Weber JP, Wang SC, Yang JJ, Wu MC, Wang S, Whinnery JR. GaAs/AlGaAs surface emitting laser diode with vertical distributed feedback optical cavity and transverse junction buried heterostructure. IEDM Technical Digest, 1987. p. 792-5.
    • (1987) IEDM Technical Digest , pp. 792-795
    • Hsin, W.1    Ogura, M.2    Weber, J.P.3    Wang, S.C.4    Yang, J.J.5    Wu, M.C.6    Wang, S.7    Whinnery, J.R.8
  • 46
    • 0023842303 scopus 로고
    • Surface-emitting GaAs light-emitting diode/laser diode with modified coaxial transverse junction (CTJ) structure
    • Yamada H., Watanabe H., Ito H., Inaba H. Surface-emitting GaAs light-emitting diode/laser diode with modified coaxial transverse junction (CTJ) structure. Electron. Lett. 24:1988;77-78.
    • (1988) Electron. Lett. , vol.24 , pp. 77-78
    • Yamada, H.1    Watanabe, H.2    Ito, H.3    Inaba, H.4
  • 47
    • 0242602107 scopus 로고
    • Surface-emitting grating-coupled GaAs/AlGaAs distributed feedback laser with very narrow beam divergence
    • Mitsunaga L., Kameya M., Kojima K., Noda S., Kyuma K., Hamanaka K., Nakayama T. surface-emitting grating-coupled GaAs/AlGaAs distributed feedback laser with very narrow beam divergence. Appl. Phys. Lett. 50:1987;1788-1790.
    • (1987) Appl. Phys. Lett. , vol.50 , pp. 1788-1790
    • Mitsunaga, L.1    Kameya, M.2    Kojima, K.3    Noda, S.4    Kyuma, K.5    Hamanaka, K.6    Nakayama, T.7
  • 48
    • 0342746197 scopus 로고
    • Folded-cavity transverse junction stripe surface-emitting laser
    • Takamori T., Coldren L.A., Merz J.L. Folded-cavity transverse junction stripe surface-emitting laser. Appl. Phys. Lett. 55:1989;1053-1055.
    • (1989) Appl. Phys. Lett. , vol.55 , pp. 1053-1055
    • Takamori, T.1    Coldren, L.A.2    Merz, J.L.3
  • 49
    • 0029357331 scopus 로고
    • Planar GaAs-AlGaAs MQW transverse junction ridge waveguide lasers using shallow zinc diffusion
    • Yang W., Gopinath A., Hibbs-Brenner M. Planar GaAs-AlGaAs MQW transverse junction ridge waveguide lasers using shallow zinc diffusion. IEEE Photon. Technol. Lett. 7:1995;848-850.
    • (1995) IEEE Photon. Technol. Lett. , vol.7 , pp. 848-850
    • Yang, W.1    Gopinath, A.2    Hibbs-Brenner, M.3
  • 50
    • 0023293584 scopus 로고
    • AlGaAs/GaAs lateral current injection (LCI)-MQW laser using impurity-induced disordering
    • Furuya A., Makiuchi M., Wada O., Fujii T., Nobuhara H. AlGaAs/GaAs lateral current injection (LCI)-MQW laser using impurity-induced disordering. Jpn. J. Appl. Phys. 26:1987;L134-135.
    • (1987) Jpn. J. Appl. Phys. , vol.26 , pp. 134-135
    • Furuya, A.1    Makiuchi, M.2    Wada, O.3    Fujii, T.4    Nobuhara, H.5
  • 51
    • 0024069555 scopus 로고
    • Continuous-wave operation of lateral current injection multiquantum-well laser
    • Furuya A., Makiuchi M., Wada O. Continuous-wave operation of lateral current injection multiquantum-well laser. Electron. Lett. 24:1988;1282-1283.
    • (1988) Electron. Lett. , vol.24 , pp. 1282-1283
    • Furuya, A.1    Makiuchi, M.2    Wada, O.3
  • 52
    • 0024122710 scopus 로고
    • AlGaAs/GaAs lateral current injection multiquantum well (LCI-MQW) laser using impurity-induced disordering
    • Furuya A., Makiuchi M., Wada O., Fujii T. AlGaAs/GaAs lateral current injection multiquantum well (LCI-MQW) laser using impurity-induced disordering. IEEE J. Quantum Electron. 24:1988;2448-2453.
    • (1988) IEEE J. Quantum Electron. , vol.24 , pp. 2448-2453
    • Furuya, A.1    Makiuchi, M.2    Wada, O.3    Fujii, T.4
  • 53
    • 0024480711 scopus 로고
    • Planar, compatible OEIC's based on multiquantum well structures
    • Wada O., Furuya A., Makiuchi M. Planar, compatible OEIC's based on multiquantum well structures. IEEE Photon. Technol. Lett. 1:1989;16-18.
    • (1989) IEEE Photon. Technol. Lett. , vol.1 , pp. 16-18
    • Wada, O.1    Furuya, A.2    Makiuchi, M.3
  • 54
    • 0023648866 scopus 로고
    • Transverse junction buried heterostructure (TJ-BH) AlGaAs diode laser
    • Suzuki Y., Mukai S., Yajima H., Sato T. Transverse junction buried heterostructure (TJ-BH) AlGaAs diode laser. Electron. Lett. 23:1987;384-386.
    • (1987) Electron. Lett. , vol.23 , pp. 384-386
    • Suzuki, Y.1    Mukai, S.2    Yajima, H.3    Sato, T.4
  • 58
    • 0027910926 scopus 로고
    • Lateral current injection InGaAs/InAlAs MQW lasers grown by GSMBE/LPE hybrid method
    • Kawamura Y., Noguchi Y., Iwamura H. Lateral current injection InGaAs/InAlAs MQW lasers grown by GSMBE/LPE hybrid method. Electron. Lett. 29:1993;102-103.
    • (1993) Electron. Lett. , vol.29 , pp. 102-103
    • Kawamura, Y.1    Noguchi, Y.2    Iwamura, H.3
  • 59
    • 0028413093 scopus 로고
    • GaInAsP lateral current injection lasers on semi-insulating substrates
    • Oe K., Noguchi Y., Caneau C. GaInAsP lateral current injection lasers on semi-insulating substrates. IEEE Photon. Technol. Lett. 6:1994;479-481.
    • (1994) IEEE Photon. Technol. Lett. , vol.6 , pp. 479-481
    • Oe, K.1    Noguchi, Y.2    Caneau, C.3
  • 60
    • 21744447652 scopus 로고    scopus 로고
    • Investigations of lateral current injection lasers: Internal operating mechanisms and doping profile engineering
    • Sargent E.H., Tan G.L., Xu J.M. Investigations of lateral current injection lasers: internal operating mechanisms and doping profile engineering. Compound Semiconductors 1996. 1996;651-654.
    • (1996) Compound Semiconductors 1996 , pp. 651-654
    • Sargent, E.H.1    Tan, G.L.2    Xu, J.M.3
  • 61
    • 0030407275 scopus 로고    scopus 로고
    • Internal operating mechanisms of OEIC-compatible lateral injection lasers: Intrinsic differences from the vertical injection paradigm
    • Sargent E.H., Tan G.L., Suda D.A., Xu J.M. Internal operating mechanisms of OEIC-compatible lateral injection lasers: intrinsic differences from the vertical injection paradigm. 15th IEEE International Semiconductor Laser Conference :1996;111-112.
    • (1996) 15th IEEE International Semiconductor Laser Conference , pp. 111-112
    • Sargent, E.H.1    Tan, G.L.2    Suda, D.A.3    Xu, J.M.4
  • 62
    • 0030400985 scopus 로고    scopus 로고
    • Investigations of the physical mechanisms governing the performance of OEIC-compatible p-i-n active region lateral current injection lasers
    • Sargent E.H., Xu J.M. Investigations of the physical mechanisms governing the performance of OEIC-compatible p-i-n active region lateral current injection lasers. LEOS '96 Annual Meeting. 1996;314-315.
    • (1996) LEOS '96 Annual Meeting , pp. 314-315
    • Sargent, E.H.1    Xu, J.M.2
  • 64
    • 0039389235 scopus 로고    scopus 로고
    • Integration-compatible lateral current injection lasers: Design of 2D heterostructure devices
    • Sargent E.H., Xu J.M. Integration-compatible lateral current injection lasers: design of 2D heterostructure devices. Conf. on Lasers and Electro-Optics/Pacific Rim :1997.
    • (1997) Conf. on Lasers and Electro-Optics/Pacific Rim
    • Sargent, E.H.1    Xu, J.M.2
  • 66
    • 0032184122 scopus 로고    scopus 로고
    • Lateral current injection lasers: Underlying mechanisms and design for improved high-power efficiency
    • Sargent E.H., Tan G., Xu J.M. Lateral current injection lasers: underlying mechanisms and design for improved high-power efficiency. Journal of Lightwave Technology. 16:(10):1998;1854-1864.
    • (1998) Journal of Lightwave Technology , vol.16 , Issue.10 , pp. 1854-1864
    • Sargent, E.H.1    Tan, G.2    Xu, J.M.3
  • 67
    • 0342311297 scopus 로고    scopus 로고
    • OEIC-enabling lateral current injection (LCI) lasers: Efficient functional devices using lateral beam-steering
    • Sargent E.H., Meshkati F. OEIC-enabling lateral current injection (LCI) lasers: efficient functional devices using lateral beam-steering. European Conference on Integrated Optics :1999.
    • (1999) European Conference on Integrated Optics
    • Sargent, E.H.1    Meshkati, F.2
  • 68
    • 0012165249 scopus 로고    scopus 로고
    • Experimental investigation of physical mechanisms underlying lateral current injection laser operation
    • Sargent E.H., Xu J.M., Caneau C., Zah C. Experimental investigation of physical mechanisms underlying lateral current injection laser operation. Appl. Phys. Lett. 73:1998;285-287.
    • (1998) Appl. Phys. Lett. , vol.73 , pp. 285-287
    • Sargent, E.H.1    Xu, J.M.2    Caneau, C.3    Zah, C.4
  • 70
    • 0032122077 scopus 로고    scopus 로고
    • OEIC-enabling LCI lasers with current guides: Combined theoretical-experimental investigation of internal operating mechanisms
    • Sargent E.H., Oe K., Caneau C., Xu J.M. OEIC-enabling LCI lasers with current guides: combined theoretical-experimental investigation of internal operating mechanisms. IEEE J. Quantum Electron. 34:1998;1280-1287.
    • (1998) IEEE J. Quantum Electron. , vol.34 , pp. 1280-1287
    • Sargent, E.H.1    Oe, K.2    Caneau, C.3    Xu, J.M.4
  • 76
    • 0343616199 scopus 로고
    • Ion implantation of InP: Overview
    • New York: INSPEC
    • Sealy B.J. Ion implantation of InP: overview. Properties of indium phosphide. 1991;INSPEC, New York.
    • (1991) Properties of Indium Phosphide
    • Sealy, B.J.1
  • 80
    • 0019597245 scopus 로고
    • Stoichiometric disturbances in ion implanted compound semiconductors
    • Christel L.A., Gibbons J.F. Stoichiometric disturbances in ion implanted compound semiconductors. J. Appl. Phys. 52:1981;5050-5055.
    • (1981) J. Appl. Phys. , vol.52 , pp. 5050-5055
    • Christel, L.A.1    Gibbons, J.F.2
  • 81
    • 0005528317 scopus 로고
    • Ion implantation in compound semiconductors - an approach based on solid state theory
    • Heckingbottom R., Ambridge T. Ion implantation in compound semiconductors - an approach based on solid state theory. Radiat. Eff. 17:1973;31-36.
    • (1973) Radiat. Eff. , vol.17 , pp. 31-36
    • Heckingbottom, R.1    Ambridge, T.2
  • 83
    • 0343180868 scopus 로고
    • Quantum well intermixing for optoelectronic integration
    • Marsh J.H., Bryce A.C. Quantum well intermixing for optoelectronic integration. Proceedings-of-the-SPIE. 2139:1994;72-80.
    • (1994) Proceedings-of-the-SPIE , vol.2139 , pp. 72-80
    • Marsh, J.H.1    Bryce, A.C.2
  • 90
    • 0027108769 scopus 로고
    • Current status of selective area epitaxy by OMCVD
    • Bhat R. Current status of selective area epitaxy by OMCVD. J. Crystal Growth. 120:1992;362-368.
    • (1992) J. Crystal Growth , vol.120 , pp. 362-368
    • Bhat, R.1
  • 91
    • 36448998781 scopus 로고
    • Orientation-dependent growth of InGaAs/InP for applications in laser-diode arrays
    • Zwinge G., Wehmann H.-H, Schlachetzki A., Hsu C.C. Orientation-dependent growth of InGaAs/InP for applications in laser-diode arrays. J. Appl. Phys. 74:1993;5516-5518.
    • (1993) J. Appl. Phys. , vol.74 , pp. 5516-5518
    • Zwinge, G.1    Wehmann, H.-H.2    Schlachetzki, A.3    Hsu, C.C.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.