Large bandgap energy control of InAlAs/InGaAs multiple quantum wells selectively grown by low-pressure MOVPE

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 669-673

  Tsuji, Masayoshi ^a   Makita, Kikuo ^a   Takeuchi, Takeshi ^a   Taguchi, Kenko ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; EPITAXIAL GROWTH; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

BANDGAP ENERGY; MULTIPLE QUANTUM WELLS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0030647332     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00528-3     Document Type: Article

References (10)

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