Full integration and characterization of Localized ONO Memory (LONOM) for embedded flash technology

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2004, Pages 240-241

  Cho, I W ^a   Lim, B R ^a   Kim, J H ^a   Kim, S S ^a   Kim, K C ^a   Lee, B J ^a   Bae, G J ^a   Lee, N I ^a   Kim, S H ^a   Koh, K W ^a   Kang, H K ^a   Seo, M K ^a   Kim, S W ^a   Hwang, S H ^a   Lee, D Y ^b   Kim, M C ^b   Chae, S D ^c   Seo, S A ^c   Kim, C W ^c  

^a System LSI Division   (South Korea)

^b SAMSUNG Electronics   (South Korea)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; EMBEDDED SYSTEMS; EXTRAPOLATION; IMAGE ANALYSIS; METALLIZING; NONVOLATILE STORAGE;

EMBEDDED NONVOLATILE MEMORY (ENVM); FLOATING GATE MEMORY; NONVOLATILE MEMORY; ONO ALIGNMENT;

FLASH MEMORY;

EID: 4544257703     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/vlsit.2004.1345502     Document Type: Conference Paper

References (4)

1. C.C. Yeh et al., IEEE NVSMW, p. 44, 2003.
2. J.-H. Kim et al., VLSI Tech. Dig., p. 31, 2003.
3. B. Eitan et al., IEEE Elec. Dev. Lett., Vol. 21, p. 543, 2000.
4. Jae. Sung. Sim et al., ISTC, Abstract No. 41, 2002.