Transmission electron microscopy investigation of local atomic environment of nitrogen inside voids formed at GaN/Sapphire interface

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 1 A, 2006, Pages 279-284

  Matsubara, Tohoru ^a   Shoda, Kaoru ^a  

^a UBE Scientific Analysis Laboratory Inc   (Japan)

Author keywords

EELS; ELNES; GaN; Interface; LED; Sapphire; Solid nitrogen; TEM; Void

Indexed keywords

ELECTRON BEAMS; ELECTRON ENERGY LOSS SPECTROSCOPY; GALLIUM NITRIDE; IRRADIATION; LIGHT EMITTING DIODES; NITROGEN; SAPPHIRE; SCANNING; TRANSMISSION ELECTRON MICROSCOPY;

ELNES; INTERFACES; SOLID NITROGEN; VOID;

INTERFACES (MATERIALS);

EID: 31544474875     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.279     Document Type: Article

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