Semiconducting non-molecular nitrogen up to 240 GPa and its low-pressure stability

Nature

Volumn 411, Issue 6834, 2001, Pages 170-174

  Eremets, Mikhall I ^a   Hemley, Russell J ^a   Mao, Ho Kwang ^a   Gregoryanz, Eugene ^a  

^a GEOPHYSICAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CHEMICAL BONDS; LOW TEMPERATURE EFFECTS; MOLECULAR CRYSTALS; MOLECULES; PRESSURE EFFECTS;

METALLIC SOLIDS;

NITROGEN;

NITROGEN;

ARTICLE; CHEMICAL BOND; DISSOCIATION; ENERGY; EQUILIBRIUM CONSTANT; HYPOBARISM; HYSTERESIS; LOW TEMPERATURE; MOLECULAR INTERACTION; PRIORITY JOURNAL; SEMICONDUCTOR;

EID: 0035837261     PISSN: 00280836     EISSN: None     Source Type: Journal    
DOI: 10.1038/35075531     Document Type: Article

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