메뉴 건너뛰기




Volumn 44, Issue 12, 2005, Pages 8286-8287

Diffusion coefficient of as and P in HfO2

Author keywords

Arsenic; Diffusion; Gate; HfO2; Phosphorous

Indexed keywords

DIFFUSION; HAFNIUM COMPOUNDS; IMPURITIES; ION IMPLANTATION; PHOSPHORUS; SILICA;

EID: 31544464081     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.8286     Document Type: Article
Times cited : (4)

References (12)
  • 11
    • 0003679027 scopus 로고
    • McGraw-Hill, New York
    • S. M. Sze: VLSI Technology (McGraw-Hill, New York, 1988) p. 193.
    • (1988) VLSI Technology , pp. 193
    • Sze, S.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.