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Volumn 44, Issue 12, 2005, Pages 8441-8444

Comparison of spectral responses between front- and back-incidence configurations in GaN metal-semiconductor-metal photodetector on sapphire

Author keywords

Back illumination; Depletion region; GaN; MSM; Nitride; Photodetector; Spectral responsivity

Indexed keywords

COMPUTER SIMULATION; CRYSTALS; ELECTROSTATICS; GALLIUM NITRIDE; SAPPHIRE; SEMICONDUCTOR DOPING; SPECTRUM ANALYSIS;

BACK ILLUMINATIONS; DEPLETION REGIONS; MSM; SPECTRAL RESPONSIVITY;

PHOTODETECTORS;

EID: 31544454711 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.44.8441 Document Type: Article

Times cited : (13)

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