Low-dark-current large-area narrow-band photodetector using InGaN/GaN layers on sapphire

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 20-23, 2005, Pages

  Ohsawa, Jun ^a   Kozawa, Takahiro ^b   Hayashi, Hiroyuki ^a   Fujishima, Osamu ^b   Itoh, Hiroshi ^b  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

^b Rd Management Section   (Japan)

Author keywords

400nm; Impulse response; InGaN; Leakage current; MSM; Nitride; Photodetector

Indexed keywords

ELECTROCHEMICAL ELECTRODES; FABRICATION; LEAKAGE CURRENTS; PHOTOCURRENTS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR LASERS; SUBSTRATES;

400NM; INGAN; MSM; NITRIDE;

PHOTODETECTORS;

EID: 23944474044     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.L623     Document Type: Article

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