AlN/GaN short-period superlattices with monolayer AlN for optical-device applications

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 13, Issue 2-4, 2002, Pages 1098-1101

  Ishida, A ^a   Kitano, M ^a   Ose, T ^a   Nagasawa, H ^a   Ishino, K ^a   Inoue, Y ^a   Fujiyasu, H ^a   Kan, H ^b   Makino, H ^c   Yao, T ^c  

^a SHIZUOKA UNIVERSITY   (Japan)

^b HPK   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

Manolayer; Nitride; Subband; Superlattice

Indexed keywords

ELECTRON TRANSITIONS; GALLIUM NITRIDE; MONOLAYERS; OPTICAL DEVICES; PHOTOLUMINESCENCE; PIEZOELECTRICITY; SEMICONDUCTING ALUMINUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

PHOTOLUMINESCENCE EXCITATION (PLE);

SEMICONDUCTOR SUPERLATTICES;

EID: 0036493021     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00312-0     Document Type: Article

References (7)