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Volumn 44, Issue 7 A, 2005, Pages 4902-4908

Spectroscopy of a bulk GaN microcavity grown on Si(111)

Author keywords

Exciton; Microcavity; Nitride; Oscillator strength; Photoluminescence; Polariton; Reflectivity; Strong coupling

Indexed keywords

EXCITONS; MICROGRAVITY PROCESSING; MIRRORS; OSCILLATORS (ELECTRONIC); PHOTOLUMINESCENCE; REFLECTION; SILICON COMPOUNDS; SPECTROSCOPIC ANALYSIS;

EID: 31544446314     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.4902     Document Type: Article
Times cited : (6)

References (38)
  • 28
    • 0001215913 scopus 로고    scopus 로고
    • The fit of the reflectivity spectrum of an high-quality homoepitaxial GaN layer demonstrates that the oscillator strength of C exciton is 2 to 4 times lower than the oscillator strengths of B and A respectively.
    • K. Kornitzer, T. Ebner, K. Thonke, R. Sauer, C. Kirchner, V. Schwegler, M. Kamp, M. Lesczynski, I. Grzegory and S. Porowski: Phys. Rev. B 60 (1999) 1471. The fit of the reflectivity spectrum of an high-quality homoepitaxial GaN layer demonstrates that the oscillator strength of C exciton is 2 to 4 times lower than the oscillator strengths of B and A respectively.
    • (1999) Phys. Rev. B , vol.60 , pp. 1471
    • Kornitzer, K.1    Ebner, T.2    Thonke, K.3    Sauer, R.4    Kirchner, C.5    Schwegler, V.6    Kamp, M.7    Lesczynski, M.8    Grzegory, I.9    Porowski, S.10
  • 37
    • 31544478147 scopus 로고
    • ed. M. Balkanski (North-Holland, Amsterdam) Chap. 4A
    • D. E. Aspnes: in Optical Properties of Solids, ed. M. Balkanski (North-Holland, Amsterdam, 1980) Chap. 4A.
    • (1980) Optical Properties of Solids
    • Aspnes, D.E.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.