Modelling of extraction efficiency of GaN-based resonant cavity light emitting diodes emitting at 510 nm

Physica Status Solidi (A) Applied Research

Volumn 192, Issue 1, 2002, Pages 103-109

  Shaw, A ^a   McCormack, T ^a   Bradley, A L ^a   Lunney, J G ^a   Donegan, J F ^a  

^a TRINITY COLLEGE DUBLIN   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

CAVITY RESONATORS; GALLIUM NITRIDE; LIGHT EMISSION; MIRRORS; SEMICONDUCTOR QUANTUM WELLS;

DISTRIBUTED BRAGG REFLECTORS (DBR);

LIGHT EMITTING DIODES;

EID: 0036650952     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200207)192:1<103::AID-PSSA103>3.0.CO;2-F     Document Type: Conference Paper

References (15)