Fabrication of vertical ZnO nanowires on silicon (100) with epitaxial ZnO buffer layer

Journal of Nanoscience and Nanotechnology

Volumn 4, Issue 8, 2004, Pages 968-971

  Li, Seu Yi ^a   Lin, Pang ^a   Lee, Chia Ying ^a   Ho, Mon Shu ^b   Tseng, Tseung Yuen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

Nanowires; Photoluminescence; Transmission Electron Microscopy; Vapor Liquid Solid Growth; X ray Diffraction; ZnO

Indexed keywords

NANO-ELECTRONIC DEVICES; NANOWIRES; RADIO-FREQUENCY (RF) SPUTTERING; VAPOR-LIQUID-SOLID GROWTH;

AUGER ELECTRON SPECTROSCOPY; BINDING ENERGY; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SILICON; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET RADIATION; X RAY DIFFRACTION; ZINC OXIDE;

NANOSTRUCTURED MATERIALS;

NANOTUBE; SILICON; ZINC OXIDE;

ADSORPTION; ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; ELECTRICITY; EVALUATION; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; SEMICONDUCTOR; SURFACE PROPERTY; ULTRASTRUCTURE;

ADSORPTION; CRYSTALLIZATION; ELECTRIC WIRING; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOTECHNOLOGY; NANOTUBES; SEMICONDUCTORS; SILICON; SURFACE PROPERTIES; ZINC OXIDE;

EID: 11244291383     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2004.135     Document Type: Article

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