메뉴 건너뛰기




Volumn E87-C, Issue 7, 2004, Pages 1134-1141

Ultrafast all-optical switching and modulation using intersubband transitions in coupled quantum well structures

Author keywords

All optical; Coupled quantum well; Intersubband transition; Optical communication; Sb

Indexed keywords

ANTIMONY; LIGHT ABSORPTION; LIGHT MODULATION; LIGHT SCATTERING; OPTICAL COMMUNICATION; PHONONS; SEMICONDUCTOR QUANTUM WELLS; SWITCHING;

EID: 3142762284     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (27)

References (28)
  • 2
    • 0026819487 scopus 로고
    • Analysis on interband-resonant light modulation by intersubband-resonant light in n-doped quantum well structure
    • S. Noda, T. Uemura, T. Yamashita, and A. Sasaki, "Analysis on interband-resonant light modulation by intersubband-resonant light in n-doped quantum well structure," IEEE J. Quantum Electron., vol.28, no.2, pp.493-500, 1992.
    • (1992) IEEE J. Quantum Electron. , vol.28 , Issue.2 , pp. 493-500
    • Noda, S.1    Uemura, T.2    Yamashita, T.3    Sasaki, A.4
  • 3
    • 0032050151 scopus 로고    scopus 로고
    • Intersubband transitions in InGaAs/AlAs coupled double quantum well structures for multi-wavelength all-optical switching
    • H. Yoshida, T. Mozume, T. Nishimura, and O. Wada, "Intersubband transitions in InGaAs/AlAs coupled double quantum well structures for multi-wavelength all-optical switching," Electron. Lett., vol.34, pp.913-915, 1998.
    • (1998) Electron. Lett. , vol.34 , pp. 913-915
    • Yoshida, H.1    Mozume, T.2    Nishimura, T.3    Wada, O.4
  • 4
    • 0344494563 scopus 로고    scopus 로고
    • Ultralow intersubband absorption saturation intensity at communication wavelength achieved in novel strain compensated InGaAs/AlAs/AlAsSb quantum wells grown by molecular beam epitaxy
    • T. Mozume, J. Kasai, N. Georgiev, T. Simoyama, A.V. Gopal, and H. Yoshida, "Ultralow intersubband absorption saturation intensity at communication wavelength achieved in novel strain compensated InGaAs/AlAs/AlAsSb quantum wells grown by molecular beam epitaxy," Jpn. J. Appl. Phys. 1, Regul. Rap. Short Notes, vol.42, no.9A, pp.5500-5507, 2003.
    • (2003) Jpn. J. Appl. Phys. 1, Regul. Rap. Short Notes , vol.42 , Issue.9 A , pp. 5500-5507
    • Mozume, T.1    Kasai, J.2    Georgiev, N.3    Simoyama, T.4    Gopal, A.V.5    Yoshida, H.6
  • 5
    • 0035868217 scopus 로고    scopus 로고
    • Sub-picosecond electron scattering time for λ∼1.55 μm intersubband transitions in GaN/AlGaN multiple quantum wells
    • C. Gmachl, S.V. Frolov, H.M. Ng, S.-N.G. Chu, and A.Y. Cho, "Sub-picosecond electron scattering time for λ∼1.55 μm intersubband transitions in GaN/AlGaN multiple quantum wells," Electron. Lett., vol.37, pp.378-380, 2001.
    • (2001) Electron. Lett. , vol.37 , pp. 378-380
    • Gmachl, C.1    Frolov, S.V.2    Ng, H.M.3    Chu, S.-N.G.4    Cho, A.Y.5
  • 6
    • 79955985276 scopus 로고    scopus 로고
    • Sub-picosecond electron relaxation of near-infrared intersubband transitions in ndoped (Cds/ZnSe)/BeTe quantum wells
    • R. Akimoto, K. Akita, F. Sasaki, and T. Hasama, "Sub-picosecond electron relaxation of near-infrared intersubband transitions in ndoped (Cds/ZnSe)/BeTe quantum wells," Appl. Phys. Lett., vol.81, pp.2998-3000, 2002.
    • (2002) Appl. Phys. Lett. , vol.81 , pp. 2998-3000
    • Akimoto, R.1    Akita, K.2    Sasaki, F.3    Hasama, T.4
  • 8
    • 79956005542 scopus 로고    scopus 로고
    • Near-infrared intersubband absorption in GaN/AIN quantum wells grown by molecular beam epitaxy
    • N. Iizuka, K. Kaneko, and N. Suzuki, "Near-infrared intersubband absorption in GaN/AIN quantum wells grown by molecular beam epitaxy," Appl. Phys. Lett., vol.81, pp.1803-1805, 2002.
    • (2002) Appl. Phys. Lett. , vol.81 , pp. 1803-1805
    • Iizuka, N.1    Kaneko, K.2    Suzuki, N.3
  • 9
    • 0038044868 scopus 로고    scopus 로고
    • Shortest intersubband transition wavelength (1.68 μm) achieved in AIN/GaN multiple quantum wells by metalorganic vapor phase epitaxy
    • I. Waki, C. Kumtornkittikul, Y. Shimogaki, and Y. Nakano, "Shortest intersubband transition wavelength (1.68 μm) achieved in AIN/GaN multiple quantum wells by metalorganic vapor phase epitaxy," Appl. Phys, Lett., vol.82, pp.4465-4467, 2003.
    • (2003) Appl. Phys, Lett. , vol.82 , pp. 4465-4467
    • Waki, I.1    Kumtornkittikul, C.2    Shimogaki, Y.3    Nakano, Y.4
  • 13
    • 0035768951 scopus 로고    scopus 로고
    • Ultrafast all-optical switching and demultiplexing using intersubband transition in InGaAs/AlAsSb quantum well structures
    • H. Yoshida, "Ultrafast all-optical switching and demultiplexing using intersubband transition in InGaAs/AlAsSb quantum well structures," Proc. SPIE's "Photonics Technology in the 21st Century," vol.4598, pp. 164-174, 2001.
    • (2001) Proc. SPIE's "Photonics Technology in the 21st Century," , vol.4598 , pp. 164-174
    • Yoshida, H.1
  • 14
    • 0035410177 scopus 로고    scopus 로고
    • Intersubband transitions and ultrafast all-optical modulation using multiple InGaAs-AlAsSb-InP coupled double-quantum well structures
    • A. Neogi, H. Yoshida, T. Mozume, N. Georgiev, and O. Wada, "Intersubband transitions and ultrafast all-optical modulation using multiple InGaAs-AlAsSb-InP coupled double-quantum well structures," IEEE J. Sel. Topics Quantum Electron., vol.7, no.4, pp.710-717, 2001.
    • (2001) IEEE J. Sel. Topics Quantum Electron. , vol.7 , Issue.4 , pp. 710-717
    • Neogi, A.1    Yoshida, H.2    Mozume, T.3    Georgiev, N.4    Wada, O.5
  • 15
    • 0031379575 scopus 로고    scopus 로고
    • Ultrafast intersubband transitions in InGaAs/AlAs coupled double quantum well structures for near-infrared all-optical switching
    • H. Yoshida, T. Mozume, T. Nishimura, and O. Wada, "Ultrafast intersubband transitions in InGaAs/AlAs coupled double quantum well structures for near-infrared all-optical switching," Proc. 10th Annual Meeting IEEE Lasers & Electro-Optics Soc., pp.441-442, 1997.
    • (1997) Proc. 10th Annual Meeting IEEE Lasers & Electro-optics Soc. , pp. 441-442
    • Yoshida, H.1    Mozume, T.2    Nishimura, T.3    Wada, O.4
  • 16
    • 0034540325 scopus 로고    scopus 로고
    • Ultrafast all-optical switching using near-infrared intersubband transitions in InGaAs/AlAsSb quantum well structures
    • H. Yoshida, T. Mozume, A. Neogi, N. Georgiev, T. Akiyama, and O. Wada, "Ultrafast all-optical switching using near-infrared intersubband transitions in InGaAs/AlAsSb quantum well structures," Proc. Conf. on Lasers and Electro-Optics, pp.357-358, 2000.
    • (2000) Proc. Conf. on Lasers and Electro-optics , pp. 357-358
    • Yoshida, H.1    Mozume, T.2    Neogi, A.3    Georgiev, N.4    Akiyama, T.5    Wada, O.6
  • 17
    • 0032661348 scopus 로고    scopus 로고
    • Ultrafast all-optical switching at 1.3 μm/1.55 μm using InGaAs/AlAsSb/InP coupled double quantum well structure for intersubband transitions
    • H. Yoshida, T. Mozume, A. Neogi, and O. Wada, "Ultrafast all-optical switching at 1.3 μm/1.55 μm using InGaAs/AlAsSb/InP coupled double quantum well structure for intersubband transitions," Electron. Lett., vol.35, pp.1103-1105, 1999.
    • (1999) Electron. Lett. , vol.35 , pp. 1103-1105
    • Yoshida, H.1    Mozume, T.2    Neogi, A.3    Wada, O.4
  • 18
    • 0001675620 scopus 로고
    • Band nonparabolicity effects in semiconductor quantum wells
    • D.F. Nelson, R.C. Miller, and D.A. Kleinman, "Band nonparabolicity effects in semiconductor quantum wells," Phys. Rev. B, vol.35, pp.7770-7773, 1987.
    • (1987) Phys. Rev. B , vol.35 , pp. 7770-7773
    • Nelson, D.F.1    Miller, R.C.2    Kleinman, D.A.3
  • 20
    • 0035138659 scopus 로고    scopus 로고
    • Nonlinearity and recovery time of 1.55 μm intersubband absorption in InGaAs/AlAs/AlAsSb coupled quantum wells
    • T. Akiyama, N. Georgiev, T. Mozume, H. Yoshida, A.V. Gopal, and O. Wada, "Nonlinearity and recovery time of 1.55 μm intersubband absorption in InGaAs/AlAs/AlAsSb coupled quantum wells," Electron. Lett., vol.37, pp.129-130, 2001.
    • (2001) Electron. Lett. , vol.37 , pp. 129-130
    • Akiyama, T.1    Georgiev, N.2    Mozume, T.3    Yoshida, H.4    Gopal, A.V.5    Wada, O.6
  • 21
    • 0036539709 scopus 로고    scopus 로고
    • 1.55-μm picosecond all-optical switching by using intersubband absorption in InGaAs-AlAs-AlAsSb coupled quantum wells
    • T. Akiyama, N. Georgiev, T. Mozume, H. Yoshida, A.V. Gopal, and O. Wada, "1.55-μm picosecond all-optical switching by using intersubband absorption in InGaAs-AlAs-AlAsSb coupled quantum wells," IEEE Photon. Technol. Lett., vol.14, no.4, pp.495-497, 2002.
    • (2002) IEEE Photon. Technol. Lett. , vol.14 , Issue.4 , pp. 495-497
    • Akiyama, T.1    Georgiev, N.2    Mozume, T.3    Yoshida, H.4    Gopal, A.V.5    Wada, O.6
  • 22
    • 0000212925 scopus 로고    scopus 로고
    • Ultrafast all-optical modulation of interband-light pulses by ultrashort intersubband light pulses in semiconductor quantum wells
    • A. Neogi, H. Yoshida, T. Mozume, and O. Wada, "Ultrafast all-optical modulation of interband-light pulses by ultrashort intersubband light pulses in semiconductor quantum wells," J. Appl. Phys., vol.85, pp.3352-3358, 1999.
    • (1999) J. Appl. Phys. , vol.85 , pp. 3352-3358
    • Neogi, A.1    Yoshida, H.2    Mozume, T.3    Wada, O.4
  • 23
    • 85027177380 scopus 로고    scopus 로고
    • Ultrafast all-optical switching using intersubband transitions in a novel heavily doped InGaAs/AlAs/AlAsSb coupled double quantum well structure
    • paper We4.P77
    • H. Yoshida, T. Simoyama, A.V. Gopal, J. Kasai, T. Mozume, and H. Ishikawa, "Ultrafast all-optical switching using intersubband transitions in a novel heavily doped InGaAs/AlAs/AlAsSb coupled double quantum well structure," Proc. 29th European Conf. on Opt. Commun., paper We4.P77, 2003.
    • (2003) Proc. 29th European Conf. on Opt. Commun.
    • Yoshida, H.1    Simoyama, T.2    Gopal, A.V.3    Kasai, J.4    Mozume, T.5    Ishikawa, H.6
  • 24
    • 0035398835 scopus 로고    scopus 로고
    • Dopant-induced interface disorder in InGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxy
    • T. Mozume, N. Georgiev, and H. Yoshida, "Dopant-induced interface disorder in InGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxy," J. Crystal Growth, vol.227-228, pp.577-581, 2001.
    • (2001) J. Crystal Growth , vol.227-228 , pp. 577-581
    • Mozume, T.1    Georgiev, N.2    Yoshida, H.3
  • 25
    • 0141987586 scopus 로고    scopus 로고
    • InGaAs-AlAs-AlAsSb coupled quantum well intersubband transition all-optical switch with low switching energy for OTDM systems
    • T. Simoyama, H. Yoshida, J. Kasai, T. Mozume, A.V. Gopal, and H. Ishikawa, "InGaAs-AlAs-AlAsSb coupled quantum well intersubband transition all-optical switch with low switching energy for OTDM systems," IEEE Photon. Technol. Lett., vol.15, no.10, pp.1363-1365, 2003.
    • (2003) IEEE Photon. Technol. Lett. , vol.15 , Issue.10 , pp. 1363-1365
    • Simoyama, T.1    Yoshida, H.2    Kasai, J.3    Mozume, T.4    Gopal, A.V.5    Ishikawa, H.6
  • 28
    • 0033697243 scopus 로고    scopus 로고
    • Picosecond all-optical switching using 1.55 μm intersubband transition in an InGaAs/AlAs/AlAsSb coupled double quantum well (C-DQW) structure
    • H. Yoshida, T. Mozume, A. Neogi, N. Georgiev, T. Akiyama, and O. Wada, "Picosecond all-optical switching using 1.55 μm intersubband transition in an InGaAs/AlAs/AlAsSb coupled double quantum well (C-DQW) structure," Proc. Conf. on Lasers and Electro-Optics Europe, p.63, 2000.
    • (2000) Proc. Conf. on Lasers and Electro-optics Europe , pp. 63
    • Yoshida, H.1    Mozume, T.2    Neogi, A.3    Georgiev, N.4    Akiyama, T.5    Wada, O.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.