Comparison and optimization of edge termination techniques for SiC power devices

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2001, Pages 191-194

  Sheridan, D C ^a   Niu, G ^a   Neil Merrett, J ^a   Cressler, J D ^a   Dufrene, J B ^a   Casady, J B ^a   Sankin, I ^a  

^a AUBURN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONSTRAINT THEORY; ELECTRIC BREAKDOWN; ELECTRIC CHARGE; INTERFACES (MATERIALS); OPTIMIZATION; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE;

EDGE TERMINATION TECHNIQUES;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0034821845     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)