Proposal of a planar 8F2 1T2C-type ferroelectric memory cell

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 B, 2003, Pages 2059-2062

  Yamamoto, Shuu'ichirou ^a   Kim, Hyun Soo ^a   Ishiwara, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

1T2C type ferroelectric memory; Data retention; Ferroelectric gate field effect transistor; Ferroelectric random access memory (FeRAM); High density integration; Memory array; Memory cell; Non destructive data readout; Silicon on insulator (SOI)

Indexed keywords

CAPACITORS; COMPUTER SIMULATION; DIELECTRIC FILMS; ELECTRIC CHARGE; ELECTRODES; FERROELECTRIC DEVICES; FERROELECTRIC MATERIALS; INTEGRATED CIRCUITS; MOSFET DEVICES; POLARIZATION; SEMICONDUCTOR DEVICE STRUCTURES;

FERROELECTRIC CAPACITORS; FERROELECTRIC FILMS; FERROELECTRIC MEMORY CELL; FERROELECTRIC RANDOM ACCESS MEMORY; SIMULATION PROGRAM WITH INTEGRATED CIRCUIT EMPHASIS SIMULAITON;

RANDOM ACCESS STORAGE;

EID: 0038686499     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.2059     Document Type: Article

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