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Volumn 48, Issue 1, 1999, Pages 143-146

Effect of pad wear on the chemical mechanical polishing of silicon wafers

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL POLISHING; FINITE ELEMENT METHOD; SILICON WAFERS; STRESS CONCENTRATION; SURFACES;

EID: 0032684315     PISSN: 00078506     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0007-8506(07)63151-5     Document Type: Article
Times cited : (43)

References (11)
  • 1
    • 0031361459 scopus 로고    scopus 로고
    • Technological Advances in Fine Abrasive Processes
    • Komanduri, R., Lucca, DA., Tani, Y., 1997, Technological Advances in Fine Abrasive Processes, Annals of the CIRP, Vol. 46/2, pp 545-596.
    • (1997) Annals of the CIRP , vol.46 , Issue.2 , pp. 545-596
    • Komanduri, R.1    Lucca, D.A.2    Tani, Y.3
  • 2
    • 0028554804 scopus 로고
    • Characterisation of Chemical-Mechanical Polishing Dielectrics for Multilevel Metalization
    • Sun, S. C., Yeh, F. L., Tien, H. Z., 1994, Characterisation of Chemical-Mechanical Polishing Dielectrics for Multilevel Metalization, Mat. Res. Symp. Proc. Vol. 337, pp. 389-381.
    • (1994) Mat. Res. Symp. Proc. , vol.337 , pp. 389-1381
    • Sun, S.C.1    Yeh, F.L.2    Tien, H.Z.3
  • 4
    • 85031620924 scopus 로고    scopus 로고
    • Global Planarity of Silicon Wafers Resulting from Chemical Mechanical Polishing
    • Oct. ISBN 1898012377
    • Mullany, B., 1997, Global Planarity of Silicon Wafers Resulting from Chemical Mechanical Polishing, Sir Bernard Crossland Symposium, Oct. pp. 35-49. (ISBN 1898012377).
    • (1997) Sir Bernard Crossland Symposium , pp. 35-49
    • Mullany, B.1
  • 5
    • 0026170357 scopus 로고
    • Application of Chemical Mechanical Polishing to the Fabrication of VLSI Circuit Interconnections
    • June
    • Patrick, W., Guthrie, W., Standley, C., Schiable, P., 1991, Application of Chemical Mechanical Polishing to the Fabrication of VLSI Circuit Interconnections., J. Electrochem. Soc., June, Vol. 138, No. 6, pp. 1778-1784.
    • (1991) J. Electrochem. Soc. , vol.138 , Issue.6 , pp. 1778-1784
    • Patrick, W.1    Guthrie, W.2    Standley, C.3    Schiable, P.4
  • 6
    • 0028553194 scopus 로고
    • Planarization Ability of Chemical Mechanical Planarization (CMP) Processes
    • Materials Research Society
    • Stell, M., Jairath, R., Desai, M., Tooles, R., 1994, Planarization Ability of Chemical Mechanical Planarization (CMP) Processes., Mat. Res. Soc. Symp. Proc., Materials Research Society, Vol. 337, pp 151-156.
    • (1994) Mat. Res. Soc. Symp. Proc. , vol.337 , pp. 151-156
    • Stell, M.1    Jairath, R.2    Desai, M.3    Tooles, R.4
  • 8
    • 0029513786 scopus 로고
    • Simultaneous Temperature Measurement of Wafers in Chemical Mechanical Polishing of Silicon Dioxide Layer
    • Sugimoto, F., Arimoto ,Y., Ito, T., 1995, Simultaneous Temperature Measurement of Wafers in Chemical Mechanical Polishing of Silicon Dioxide Layer., Jap. J. Appl. Phys., Vol. 34, pp. 6314-6320.
    • (1995) Jap. J. Appl. Phys. , vol.34 , pp. 6314-6320
    • Sugimoto, F.1    Arimoto, Y.2    Ito, T.3
  • 9
    • 85031622463 scopus 로고    scopus 로고
    • Integrating Solutions for the Challenges of CMP
    • ISSN 1358-1759
    • th edition, pp. 223-233 (ISSN 1358-1759).
    • (1998) th Edition , pp. 223-233
    • Curry, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.