Electrical parameters in highly doped strained n-Si1 - xGe x epilayers grown on Si substrates

Solid-State Electronics

Volumn 48, Issue 10-11 SPEC. ISS., 2004, Pages 2095-2098

  Tsamakis, D ^a   Sargentis, Ch ^a   Kuznetsov, A Yu ^b   Lampakis, D ^a  

^a NATIONAL TECHNICAL UNIVERSITY OF ATHENS   (Greece)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

Conduction band splitting; Hall effect; Mobility; SiGe; Strained heterostructures

Indexed keywords

BAND STRUCTURE; CONCENTRATION (PROCESS); HALL EFFECT; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; STRAIN; SUBSTRATES;

CONDUCTION BAND SPLITTING; MOBILITY; SIGE; STRAINED HETEROSTRUCTURES;

HETEROJUNCTIONS;

EID: 3142664156     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.05.065     Document Type: Conference Paper

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