Analytical calculation of effective densities of states, intrinsic carrier concentration and ionized doping concentration in strained Si1-xGex alloys on (001) Si substrates at room and low temperatures

Cryogenics

Volumn 36, Issue 11, 1996, Pages 915-919

  Wan Rong, Zhang ^a   Zheng, Zeng ^a   Jin Sheng, Luo ^a  

^a XI'AN JIAOTONG UNIVERSITY   (China)

Author keywords

Carrier freeze out; Effective densities of states; Intrinsic carrier concentration; SiGe alloy; Strain

Indexed keywords

CALCULATIONS; CHARGE CARRIERS; ION IMPLANTATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SUBSTRATES; THERMAL EFFECTS;

EFFECTIVE DENSITIES OF STATES; STRAINED SIGE ALLOY;

ALLOYS;

EID: 0030285113     PISSN: 00112275     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0011-2275(96)00066-5     Document Type: Article

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