Location control of crystal Si grain followed by excimer-laser melting of Si thin-films

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 1 PART A/B, 1998, Pages

  Ishihara, Ryoichi ^a   Van Der Wilt, Paul Ch ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Excimer laser; Location control; Single crystal silicon; SOI; Thin film transistors

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; EXCIMER LASERS; MELTING; NUCLEATION; PLASMA ETCHING; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; THIN FILM TRANSISTORS;

EXCIMER LASER MELTING; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; TETRAECHYLORTHOSILICATE;

SINGLE CRYSTALS;

EID: 0031680958     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l15     Document Type: Article

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