Two-dimensionally position-controlled excimer-laser-crystallization of silicon thin films on glassy substrate

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 10, 1999, Pages 5700-5705

  Ozawa, Motohiro ^a   Chang Ho, O H ^a   Matsumura, Masakiyo ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; EXCIMER LASERS; GRAIN SIZE AND SHAPE; LIGHT ABSORPTION; MASKS; SEMICONDUCTING GLASS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SILICON ON INSULATOR TECHNOLOGY; SPACE HEATING; SUBSTRATES; THIN FILMS;

PHASE-SHIFT MASKS; TWO-DIMENSIONALLY POSITION-CONTROLLED EXCIMER-LASER-CRYSTALLIZATION;

SEMICONDUCTING FILMS;

EID: 0033353372     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.5700     Document Type: Article

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