Two-pass excimer laser annealing process to control amorphous silicon crystallization

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 8 B, 1999, Pages

  Mariucci, Luigi ^a   Carluccio, Roberto ^a   Pecora, Alessandro ^a   Foglietti, Vittorio ^a   Fortunato, Guglielmo ^a   Della Sala, Dario ^a  

^a Via Cineto Romano 42 00156   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; EXCIMER LASERS; GRAIN GROWTH; IRRADIATION; LIGHT MODULATION; MASKS; POLYCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY;

EXCIMER LASER ANNEALING; GRAIN GROWTH CONTROL; MASK PATTERNS;

ANNEALING;

EID: 0033173939     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l907     Document Type: Article

References (16)