High-performance composite-collector InP/InGaAs heterojunction bipolar transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 B, 2004, Pages 2243-2249

  Kurishima, Kenji ^a   Ida, Minoru ^a   Ishii, Kiyoshi ^a   Watanabe, Noriyuki ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Composite collector; Current blocking effect; HBT; InP

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; ELECTRIC SPACE CHARGE; ELECTRON CYCLOTRON RESONANCE; EMITTER COUPLED LOGIC CIRCUITS; MIM DEVICES; REACTIVE ION ETCHING; SANDWICH STRUCTURES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; TRANSIT TIME DEVICES;

COMPOSITE COLLECTORS; CURRENT BLOCKING EFFECTS; GATE DELAYS; INP;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 3142613410     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.2243     Document Type: Conference Paper

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