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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 B, 2004, Pages 2050-2053

Active pixel sensor using a 1 × 16 nano-wire photodetector array for complementary metal oxide semiconductor imagers

(8) Park, Jae Hyoun a Seo, Sang Ho a Wang, In Soo a Yoon, Hyung June a Shin, Jang Kyoo a Choi, Pyung a Jo, Young Chang b Kim, Hoon b

a Kyungpook National University (South Korea)

b Korea Electronic Technology Institute (KETI) (South Korea)

Author keywords

APS; CMOS; Nano wire; NMOSFET; Photodetector; SOI

Indexed keywords

CHANNEL CAPACITY; CMOS INTEGRATED CIRCUITS; ELECTRON BEAM LITHOGRAPHY; IMAGE SENSORS; LIGHTING; MOS DEVICES; OXIDATION; PHOTODETECTORS; PHOTOLITHOGRAPHY; SENSITIVITY ANALYSIS; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

ACTIVE PIXEL SENSOR; GATE VOLTAGE; NANO-WIRE; THERMAL OXIDATION;

SENSORS;

EID: 3142526714 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.2050 Document Type: Conference Paper

Times cited : (18)

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