SCOPUS 정보 검색 플랫폼

Volumn 252, Issue 8, 2006, Pages 2647-2656

The behaviors of the carrier concentrations and mobilities in indium-tin-oxide thin films by DC and RF-superimposed DC reactive magnetron sputtering at the various process temperatures

(1) Lee, Ho Chul a

a Samsung Corning Co Ltd (South Korea)

Author keywords

Carrier concentration; Carrier mobility; Hall measurement; Indium tin oxide; Process temperature; Sputtering

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; GRAIN BOUNDARIES; MAGNETRON SPUTTERING; X RAY DIFFRACTION ANALYSIS;

HALL MEASUREMENT; INDIUM-TIN OXIDE; PROCESS TEMPERATURES;

THIN FILMS;

EID: 31344463027 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2005.02.128 Document Type: Article

Times cited : (26)

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