Post-breakdown oxide voltage oscillation in thin SiO2 under nano-scaled repetitive ramped voltage stress

Electronics Letters

Volumn 42, Issue 2, 2006, Pages 118-120

  Wu, Y L ^a   Lin, S T ^a  

^a NATIONAL CHI NAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC POTENTIAL; ELECTRON TRAPS; NANOTECHNOLOGY; SILICA;

OXIDE VOLTAGE; TRAP ENERGY; VOLTAGE OSCILLATION; VOLTAGE STRESS;

THIN FILMS;

EID: 31344456641     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20063577     Document Type: Article

References (10)

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