Effect of buffer layer on InSb quantum wells grown on GaAs (001) substrates

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 3, 2004, Pages 1472-1474

  Mishima, T D ^a   Santos, M B ^a  

^a University of Oklahoma   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); LATTICE VIBRATIONS; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; NUCLEATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES; SPUTTER DEPOSITION; SUBSTRATES; THERMOCOUPLES; TRANSMISSION ELECTRON MICROSCOPY;

BUFFER LAYERS; HOMOEPITAXIAL LAYERS; MICROTWINS; TEMPERATURE DIFFERENCES;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 3242733124     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1699340     Document Type: Conference Paper

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