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Volumn 20, Issue 3-4, 2004, Pages 260-263

Effect of structural defects on InSb/AlxIn1-x Sb quantum wells grown on GaAs (0 0 1) substrates

Author keywords

Electron mobility; InSb quantum wells; Structural defects; Transmission electron microscopy

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER MOBILITY; HALL EFFECT; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SENSORS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0347129552     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.08.014     Document Type: Conference Paper
Times cited : (15)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.