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Volumn 20, Issue 3-4, 2004, Pages 260-263
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Effect of structural defects on InSb/AlxIn1-x Sb quantum wells grown on GaAs (0 0 1) substrates
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Author keywords
Electron mobility; InSb quantum wells; Structural defects; Transmission electron microscopy
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
CARRIER MOBILITY;
HALL EFFECT;
MAGNETORESISTANCE;
MOLECULAR BEAM EPITAXY;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR GROWTH;
SENSORS;
TRANSMISSION ELECTRON MICROSCOPY;
ELECTRON MASS;
STRUCTURAL DEFECTS;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 0347129552
PISSN: 13869477
EISSN: None
Source Type: Journal
DOI: 10.1016/j.physe.2003.08.014 Document Type: Conference Paper |
Times cited : (15)
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References (11)
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