Anisotropic structural and electronic properties of InSb/AlxIn1-xSb quantum wells grown on GaAs (0 0 1) substrates

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 551-555

  Mishima, T D ^a   Keay, J C ^a   Goel, N ^a   Ball, M A ^a   Chung, S J ^a   Johnson, M B ^a   Santos, M B ^a  

^a University of Oklahoma   (United States)

Author keywords

A1. Planar defects; A3. Molecular beam epitaxy; B2. Semiconducting indium compounds; B3. High electron mobility transistors

Indexed keywords

ANISOTROPY; CRYSTAL DEFECTS; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; HIGH ELECTRON MOBILITY TRANSISTORS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

PLANAR DEFECTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037380618     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02183-8     Document Type: Conference Paper

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