Effect of temperature on ballistic transport in InSb quantum wells

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 21, Issue 2-4, 2004, Pages 761-764

  Goel, N ^a,b   Chung, S J ^a   Santos, M B ^a,b,c   Suzuki, K ^b   Miyashita, S ^b   Hirayama, Y ^b,c  

^a University of Oklahoma   (United States)

^b Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Ballistic transport; Bend resistance; InSb; Quantum well

Indexed keywords

ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; HIGH TEMPERATURE EFFECTS; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SUPERLATTICES;

BALLISTIC TRANSPORT; BEND RESISTANCE; INSB;

SEMICONDUCTOR QUANTUM WELLS;

EID: 1642406546     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.11.116     Document Type: Conference Paper

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