Epitaxial growth of NiSi2 on (001)Si inside nanoscale contact holes prepared by atomic force microscope tip-induced local oxidation of the thin Si3N4 layer

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 5, 2005, Pages 1905-1908

  Chen, S Y ^a   Chen, L J ^a   Tzeng, S D ^a   Gwo, S ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; MORPHOLOGY; OXIDATION;

ANNEALING CONDITIONS; STRESS LEVEL;

NICKEL COMPOUNDS;

EID: 31144471725     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2000967     Document Type: Article

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