A study of the correlation between ultraviolet and infrared emission in Ni-doped SiOx films

Journal of Physics D: Applied Physics

Volumn 39, Issue 3, 2006, Pages 449-452

  He, Y ^a   Bi, L ^a   Feng, J Y ^a   Wu, Q L ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; INFRARED RADIATION; NICKEL; OXIDATION; OXYGEN; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; ULTRAVIOLET RADIATION;

INFRARED EMISSION; OXIREDUCTION; UV EMISSION;

THIN FILMS;

EID: 31144471372     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/39/3/004     Document Type: Article

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