High performance sub-0.25 μm devices using ultrathin oxide-nitride-oxide gate dielectric formed with low pressure oxidation and chemical vapor deposition

IEEE Electron Device Letters

Volumn 21, Issue 6, 2000, Pages 316-318

  Ma, Y ^a   Lee, J L ^b   Carroll, M S ^a   Lee, K H ^a  

^a NOKIA RESEARCH CENTER   (United States)

^b PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; GATES (TRANSISTOR); OXIDATION; TRANSCONDUCTANCE;

OXIDE-NITRIDE-OXIDE GATE DIELECTRICS;

MOSFET DEVICES;

EID: 0033746234     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.843162     Document Type: Article

References (17)

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