SSRM and SCM observation of enhanced lateral As- and BF2-diffusion induced by nitride spacers.

Materials Research Society Symposium - Proceedings

Volumn 610, Issue , 2000, Pages

  Eyben, P ^a   Duhayon, N ^a   Stuer, C ^a   De Wolf, I ^a   Rooyackers, R ^a   Clarysse, T ^a   Vandervorst, W ^a   Badenes, G ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; BORON; CAPACITANCE; DIFFUSION; DOPING (ADDITIVES); ELECTRIC RESISTANCE; MICROSCOPIC EXAMINATION; NITRIDES; RAMAN SPECTROSCOPY; STRESSES; THICKNESS MEASUREMENT;

LATERAL DIFFUSION; SCANNING CAPACITANCE MICROSCOPY; SCANNING SPREADING RESISTANCE MICROSCOPY; TRANSIENT ENHANCED DIFFUSION;

TRANSISTORS;

EID: 0034438359     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-610-b2.2     Document Type: Conference Paper

References (6)

1. 1 and 2D carrier profiling in semiconductors by nanoSRP
2. Two-dimensional carrier profiling of semiconductor structures with nanometer resolution
3. Quantification of nanospreading resistance profiling data
4. Lateral dopant profiling on a 100nm scale by scanning capacitance microscopy
5. Determination of lattice strain in local isolation structures by electron diffraction techniques and micro-Raman spectroscopy
6. Thermodynamics of diffusion under pressure and stress: Relation to point defect mechanisms