A new quantum well intermixing technique using inductively-coupled argon plasma on InGaAs/InGaAsP laser structures

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2002, Pages 319-322

  Leong, D ^a   Djie, H S ^a   Dowd, P ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Inductively coupled plasma; InGaAs InGaAsP system; Plasma technique; Quantum well intermixing

Indexed keywords

ANNEALING; ARGON; INDUCTIVELY COUPLED PLASMA; REACTIVE ION ETCHING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

QUANTUM WELL INTERMIXING;

QUANTUM WELL LASERS;

EID: 0036047945     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. Quantum well intermixing
2. Integration process for photonic integrated circuits using plasma damage induced layer intermixing
3. Novel quantum well intermixing in InGaAs-InGaAsP laser structure using argon plasma exposure