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Volumn 23, Issue 3, 2005, Pages 448-451

Characterization of epitaxial germanium grown on (La xY 1-x) 2O 3 Si(111) using different surfactants

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL QUALITY; GERMANIUM LAYERS;

EID: 31044444872     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1875253     Document Type: Article
Times cited : (1)

References (14)
  • 4
    • 31044450118 scopus 로고    scopus 로고
    • 61st Dev. Res. Conf., Conf. Digest
    • S. S. Yu, C. H. Huang, A. Chin, and W. J. Chen, 61st Dev. Res. Conf., Conf. Digest 2003, Vol. 39.
    • (2003) , vol.39
    • Yu, S.S.1    Huang, C.H.2    Chin, A.3    Chen, W.J.4
  • 13
    • 26144449160 scopus 로고
    • Simulations were carried out using a standard x-ray reflectivity modeling software package (Parratt32 Software, Hahn-Meitner-Institut, Berlin GmbH) based on the theory developed in Parratt, L. G., Phys. Rev. 0031-899X 10.1103/PhysRev.95.359 95, 359 (1954);
    • (1954) Phys. Rev. , vol.95 , pp. 359
    • Parratt, L.G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.