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Volumn A, Issue , 2003, Pages 919-922
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Analysis of the defect activation in CZ-silicon by temperature-dependent bias-induced degradation of solar cells
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Author keywords
[No Author keywords available]
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Indexed keywords
ACTIVATION RATE;
DEFECT ACTIVATION;
DEFECT ENERGY LEVEL;
METASTABLE DEFECT;
ACTIVATION ENERGY;
CARRIER CONCENTRATION;
DEFECTS;
DEGRADATION;
FERMI LEVEL;
ILLUMINATING ENGINEERING;
SOLAR CELLS;
THERMAL EFFECTS;
SILICON;
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EID: 6344240819
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (33)
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References (5)
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