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Volumn A, Issue , 2003, Pages 919-922

Analysis of the defect activation in CZ-silicon by temperature-dependent bias-induced degradation of solar cells

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION RATE; DEFECT ACTIVATION; DEFECT ENERGY LEVEL; METASTABLE DEFECT;

EID: 6344240819     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (33)

References (5)
  • 1
  • 4
    • 0036953923 scopus 로고    scopus 로고
    • Formation and annihilation of the metastable defect in boron-doped Czochralski silicon
    • New Orleans, Louisiana, USA
    • J. Schmidt, K. Bothe, and R. Hezel, "Formation and annihilation of the metastable defect in boron-doped Czochralski silicon", Proc. 29th IEEE Photovoltaics Specialists Conference, New Orleans, Louisiana, USA (2002) pp. 178-181.
    • (2002) Proc. 29th IEEE Photovoltaics Specialists Conference , pp. 178-181
    • Schmidt, J.1    Bothe, K.2    Hezel, R.3
  • 5
    • 0037450271 scopus 로고    scopus 로고
    • Electronic properties of the metastable defect in boron-doped Czochralski silicon: Unambiguous determination by advanced lifetime spectroscopy
    • S. Rein and S. W. Glunz, "Electronic properties of the metastable defect in boron-doped Czochralski silicon: Unambiguous determination by advanced lifetime spectroscopy", Appl. Phys. Lett. 82 1054-1056 (2003).
    • (2003) Appl. Phys. Lett. , vol.82 , pp. 1054-1056
    • Rein, S.1    Glunz, S.W.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.