Structural and electronic properties of AlN, GaN and InN, and band offsets at AlN/GaN (101̄0) and (0001) interfaces

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 515-520

  Satta, A ^a   Fiorentini, Vincenzo ^a   Bosin, Andrea ^a   Meloni, F ^a   Vanderbilt, David ^a  

^a UNIVERSITY OF CAGLIARI   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; CALCULATIONS; CRYSTAL STRUCTURE; ELECTRON ENERGY LEVELS; ELECTRONIC PROPERTIES; ENERGY GAP; HYDROSTATIC PRESSURE; INTERFACES (MATERIALS); PERMITTIVITY; PRESSURE EFFECTS; QUANTUM THEORY;

ALUMINUM NITRIDE; GALLIUM NITRIDE; INDIUM NITRIDE; ION ELECTRON INTERACTION; LOCAL DENSITY APPROXIMATION; ULTRASOFT PSEUDOPOTENTIALS; VALENCE BAND OFFSET; WURTZITE; ZINCBLENDE;

NITRIDES;

EID: 0029746077     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)