Type II InAs/GaSb superlattices for high-performance photodiodes and FPAs

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5246, Issue , 2003, Pages 501-511

  Razeghi, Manijeh ^a   Wei, Yajun ^a   Bae, Junjik ^a   Gin, Aaron ^a   Hood, Andrew ^a   Jiang, Jutao ^a   Nah, Jongbum ^a  

^a NORTHWESTERN UNIVERSITY   (United States)

Author keywords

Focal plane array; GaSb; InAs; Infrared; Photodiode; Photovoltaic; Superlattices; Type II

Indexed keywords

FOCAL PLANE ARRAY (FPA); GASB; PHOTOVOLTAIC;

ELECTRIC IMPEDANCE; IMAGE QUALITY; NITROGEN; PASSIVATION; PHOTODETECTORS; PHOTOVOLTAIC CELLS; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS; SUPERLATTICES;

PHOTODIODES;

EID: 1642554735     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.512556     Document Type: Conference Paper

References (5)

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3. Yajun Wei, Aaron Gin, and Manijeh Razeghi, Gail J Brown, "Type II InAs/GaSb superlattice photovoltaic detectors with cutoff wavelength approaching 32 mm", Appl. Phys. Lett. 81(19), 3675-3677 (2002)
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