Si3H8 based epitaxy of biaxially stressed silicon films doped with carbon and arsenic for CMOS applications

Materials Research Society Symposium Proceedings

Volumn 864, Issue , 2005, Pages 143-148

  Bauer, M ^a   Zollner, S ^b   Theodore, N D ^b   Canonico, M ^b   Tomasini, P ^a   Nguyen, B Y ^b   Arena, C ^a  

^a ASM AMERICA   (United States)

^b FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; DOPING (ADDITIVES); ELLIPSOMETRY; SILANES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

METHYL SILANES; SOURCE GAS; SPECTROSCOPIC ELLIPSOMETRY;

EPITAXIAL GROWTH;

EID: 30544453803     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-864-e4.30     Document Type: Conference Paper

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