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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 16-19, 2005, Pages

Three-dimensional imaging of GaN films using transient two-photon absorption excited by near-infrared laser pulses

(4) Abe, Yasuhiro a Toda, Yasunori a,b Hoshino, Katsuyuki c Arakawa, Yasuhiko c

a HOKKAIDO UNIVERSITY (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

c UNIVERSITY OF TOKYO (Japan)

Author keywords

Defect states; GaN; Three dimensional imaging; Two photon absorption; Ultrafast laser spectroscopy

Indexed keywords

GALLIUM NITRIDE; IMAGING TECHNIQUES; LASER PULSES; LIGHT ABSORPTION; PHOTONS;

DEFECT STATES; TWO-PHOTON ABSORPTION; ULTRAFAST LASER SPECTROSCOPY;

THIN FILMS;

EID: 30544453142 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.44.L535 Document Type: Article

Times cited : (4)

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