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Volumn 44, Issue 16-19, 2005, Pages

High gain and high sensitive blue-ultraviolet avalanche photodiodes (APDs) of ZnSSe n+-i-p structure molecular beam epitaxy (MBE) grown on p-type GaAs substrates

Author keywords

Blue Ultraviolet APD; Interface superlattice buffer; Short wavelength avalanche photodiode; ZnSSe n + i p Structured APDs on p GaAs

Indexed keywords

AVALANCHE DIODES; HETEROJUNCTIONS; INTERFACIAL ENERGY; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; ZINC SULFIDE;

EID: 30544435113     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.L508     Document Type: Article
Times cited : (16)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.