Nitride-based multiquantum well p-n junction photodiodes

Solid-State Electronics

Volumn 47, Issue 5, 2003, Pages 879-883

  Su, Yan Kuin ^a   Chang, Shoou Jinn ^a   Chiou, Yu Zung ^a   Tsai, Tzong Yow ^a   Gong, Jeng ^b   Lin, Yi Chao ^a   Liu, Sen Hai ^a   Chang, Chia Sheng ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

1 f; GaN; MQW; Noise; p n junction; Photodiode

Indexed keywords

ELECTRIC BREAKDOWN; EPITAXIAL GROWTH; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOCURRENTS; SEMICONDUCTOR QUANTUM WELLS; ULTRAVIOLET DETECTORS;

MULTIQUANTUM WELLS (MQW);

PHOTODIODES;

EID: 0037407089     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00446-X     Document Type: Article

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