Topography of defect parameters on Si and GaAs wafers

Advanced Engineering Materials

Volumn 6, Issue 7, 2004, Pages 598-602

  Dornich, K ^a   Grundig Wendrock B ^a   Hahn, T ^a   Niklas, J R ^a  

^a TU BERGAKADEMIE FREIBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BAND STRUCTURE; BOUNDARY CONDITIONS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; LIGHT; PHOTOCONDUCTIVITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SILICA; SURFACE TOPOGRAPHY;

GALLIUM ARSENIDE WAFERS; PHOTO INDUCED CURRENT TRANSIENT SPECTROSCOPY (PICTS); PHOTOCONDUCTIVITY TRANSIENTS; TOPOGRAMS;

SILICON WAFERS;

EID: 4143110213     PISSN: 14381656     EISSN: None     Source Type: Journal    
DOI: 10.1002/adem.200400415     Document Type: Article

References (6)

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