Investigation of deep-level defects in semi-insulating GaAs and InP by analysis of photo-induced current transients

Materials Science and Engineering B

Volumn 42, Issue 1-3, 1996, Pages 213-216

  Kaminski P ^a   Pawlowski M ^b   Cwirko R ^b   Palczewska, M ^a   Kozlowski R ^a  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b MILITARY UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Deep level transient spectroscopy; Electron spin resonance; Photoinduced current

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON ENERGY LEVELS; IRON; PARAMAGNETIC RESONANCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SUBSTRATES;

PHOTOINDUCED CURRENT TRANSIENTS SPECTROSCOPY (PICTS);

CRYSTAL DEFECTS;

EID: 0030397567     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01709-6     Document Type: Article

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