High-resolution photoinduced transient spectroscopy as a new tool for quality assessment of semi-insulating InP

Journal of Physics Condensed Matter

Volumn 16, Issue 2, 2004, Pages

  Kaminski, P ^a   Kozlowski, R ^a   Strzelecka, S ^a   Piersa, M ^a  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; COMPLEXATION; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; ELECTRODES; ELECTRON MOBILITY; FERMI LEVEL; HALL EFFECT; IRON; LIGHTING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

HALL MOBILITY; PHOTOINDUCED TRANSIENT SPECTROSCOPY (PITS);

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0442326587     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/16/2/027     Document Type: Conference Paper

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