Assessment of electrical and optical properties of heavily Fe-implanted semi-insulating InP

Materials Science and Engineering: B

Volumn 80, Issue 1-3, 2001, Pages 202-205

  Gasparotto, A ^a   Fraboni, B ^b   Priolo, F ^c   Enrichi, F ^a   Mazzone, A ^d   Scamarcio, G ^d   Troccoli, M ^d   Mosca, R ^e  

^a UNIVERSITY OF PADOVA   (Italy)

^b UNIVERSITY OF BOLOGNA   (Italy)

^c UNIVERSITY OF CATANIA   (Italy)

^d UNIVERSITY OF BARI   (Italy)

^e CNR   (Italy)

Author keywords

Electronic density; FTIR; InP; PICTS

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC INSULATING MATERIALS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; IRON; MATHEMATICAL MODELS; PHOTOCURRENTS; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING;

SEMI-INSULATING INDIUM PHOSPHIDE;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0035932202     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00632-2     Document Type: Article

References (9)