Defect topography on GaAs wafers by microwave-detected photo-induced current transient spectroscopy

Physica Status Solidi C: Conferences

Volumn , Issue 3, 2003, Pages 885-888

  Grundig Wendrock B ^a   Niklas, J R ^a  

^a TU BERGAKADEMIE FREIBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONVENTIONAL METHODS; HIGH SPATIAL RESOLUTION; HIGH-TIME RESOLUTION; MICROWAVE ABSORPTION; NON-DESTRUCTIVE MEASUREMENT; PHOTO-INDUCED CURRENT TRANSIENT SPECTROSCOPIES; SEMI-INSULATING GALLIUM ARSENIDE; SPATIAL RESOLUTION;

DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; GALLIUM ARSENIDE; LIGHT SOURCES; PHOTOCONDUCTIVITY; SEMICONDUCTOR MATERIALS;

INDUCED CURRENTS;

EID: 33744549698     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200306253     Document Type: Conference Paper

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